Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The includes explicit expressions, taking into account first-order perturbation theory for calculating eigenstates and corresponding wave-functions obtained by Schrödinger equation in cylindrical-coordinate. Assessment proposed with technology computer-aided design (TCAD) simulations measurement results confirms its validity all regions operation. represents essential step toward analysis circuits, mainly biosensors based on transistors.